KGT30N135KDH datasheet(2/8 Pages) KEC

Part #	KGT30N135KDH

Description	High speed switching

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2 / 8 page

2

Device Mark 2

3

Lot No.

Device Mark 1

1

KGT

30N135KDH

025

2013. 7. 15

2/8

KGT30N135KDH

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Collector-Emitter Breakdown Voltage

BVCES

VGE=0V , IC=1mA

1350

-

V

Collector Cut-off Current

ICES

VGE=0V, VCE=1350V

-

1.0

mA

Gate Leakage Current

IGES

VCE=0V, VGE=±20V

-

±100

nA

Gate Threshold Voltage

VGE(th)

VGE=VCE, IC=30mA

4.0

5.5

7.0

V

Collector-Emitter Saturation Voltage

VCE(sat)

VGE=15V, IC=30A

-

1.9

2.25

V

VGE=15V, IC=30A, TC = 125℃

-

2.2

-

V

VGE=15V, IC=60A

-

2.4

-

V

Dynamic

Total Gate Charge

Qg

VCC=600V, VGE=15V, IC= 30A

-

160

-

nC

Gate-Emitter Charge

Qge

-

20

-

nC

Gate-Collector Charge

Qgc

-

60

-

nC

Turn-On Delay Time

td(on)

VCC=600V, IC=30A, VGE=15V,RG=10Ω

Inductive Load, TC = 25℃ (Note 1)

-

45

-

ns

Rise Time

tr

-

30

-

ns

Turn-Off Delay Time

td(off)

-

230

-

ns

Fall Time

tf

-

100

-

ns

Turn-On Switching Loss

Eon

-

4.5

-

mJ

Turn-Off Switching Loss

Eoff

-

1.3

-

mJ

Total Switching Loss

Ets

-

5.8

-

mJ

Turn-On Delay Time

td(on)

VCC=600V, IC=30A, VGE=15V, RG=10Ω

Inductive Load, TC = 125℃ (Note 1)

-

45

-

ns

Rise Time

tr

-

30

-

ns

Turn-Off Delay Time

td(off)

-

240

-

ns

Fall Time

tf

-

210

-

ns

Turn-On Switching Loss

Eon

-

5.3

-

mJ

Turn-Off Switching Loss

Eoff

-

2.2

-

mJ

Total Switching Loss

Ets

-

7.5

-

mJ

Input Capacitance

Cies

VCE=30V, VGE=0V, f=1MHz

-

3000

-

pF

Ouput Capacitance

Coes

-

120

-

pF

Reverse Transfer Capacitance

Cres

-

85

-

pF

Marking

Note 1 : Energy loss include tail current and diode reverse recovery.

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