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KGT30N135KDH Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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KGT30N135KDH Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
2 / 8 page 2 2 Device Mark 2 3 3 Lot No. Device Mark 1 1 1 KGT 30N135KDH 025 2013. 7. 15 2/8 KGT30N135KDH Revision No : 0 ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1mA 1350 - - V Collector Cut-off Current ICES VGE=0V, VCE=1350V - - 1.0 mA Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA Gate Threshold Voltage VGE(th) VGE=VCE, IC=30mA 4.0 5.5 7.0 V Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=30A - 1.9 2.25 V VGE=15V, IC=30A, TC = 125℃ - 2.2 - V VGE=15V, IC=60A - 2.4 - V Dynamic Total Gate Charge Qg VCC=600V, VGE=15V, IC= 30A - 160 - nC Gate-Emitter Charge Qge - 20 - nC Gate-Collector Charge Qgc - 60 - nC Turn-On Delay Time td(on) VCC=600V, IC=30A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ (Note 1) - 45 - ns Rise Time tr - 30 - ns Turn-Off Delay Time td(off) - 230 - ns Fall Time tf - 100 - ns Turn-On Switching Loss Eon - 4.5 - mJ Turn-Off Switching Loss Eoff - 1.3 - mJ Total Switching Loss Ets - 5.8 - mJ Turn-On Delay Time td(on) VCC=600V, IC=30A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ (Note 1) - 45 - ns Rise Time tr - 30 - ns Turn-Off Delay Time td(off) - 240 - ns Fall Time tf - 210 - ns Turn-On Switching Loss Eon - 5.3 - mJ Turn-Off Switching Loss Eoff - 2.2 - mJ Total Switching Loss Ets - 7.5 - mJ Input Capacitance Cies VCE=30V, VGE=0V, f=1MHz - 3000 - pF Ouput Capacitance Coes - 120 - pF Reverse Transfer Capacitance Cres - 85 - pF Marking Note 1 : Energy loss include tail current and diode reverse recovery. |
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