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NCV8716MT15TBG Datasheet(PDF) 6 Page - ON Semiconductor |
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NCV8716MT15TBG Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 16 page NCV8716 www.onsemi.com 6 Table 7. ELECTRICAL CHARACTERISTICS Voltage version 3.0 V −40 °C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 17) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage IOUT = 80 mA VIN 4.0 24 V Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 2.94 3.0 3.06 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 4 10 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 15) VDO = VIN – (VOUT(NOM) – 150 mV) IOUT = 80 mA VDO 370 580 mV Maximum Output Current (Note 18) IOUT 110 mA Ground current 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 5.8 mA Power Supply Rejection Ratio VIN = 4.3 V, VOUT = 3.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz PSRR 58 dB Output Noise Voltage VOUT = 4.3 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 190 mVrms Thermal Shutdown Temperature (Note 16) Temperature increasing from TJ = +25°C TSD 155 °C Thermal Shutdown Hysteresis (Note 16) Temperature falling from TSD TSDH − 25 − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 15. Characterized when VOUT falls 150 mV below the regulated voltage and only for devices with VOUT = 3.0 V 16. Guaranteed by design and characterization. 17. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25 °C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 18. Respect SOA |
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