NCV8170AXV280T2G datasheet(9/20 Pages) ONSEMI

Part #	NCV8170AXV280T2G

Description	Ultra?륧ow IQ 150 mA CMOS LDO Regulator

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NCV8170

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.3 V

(−40

°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 27)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VIN

Operating Input Voltage

2.2

−

5.5

V

VOUT

Output Voltage

TA = +25°C

3.267

3.3

3.333

V

−40

°C ≤ TJ ≤ 125°C

3.234

3.3

3.366

LineReg

Line Regulation

4.3 V < VIN ≤ 5.5 V, IOUT = 1 mA

−

0.05

0.20

%/V

LoadReg

Load Regulation

0 mA < IOUT ≤ 150 mA, VIN = 4.3 V

−20

1

20

mV

VDO

Dropout Voltage

IOUT = 150 mA (Note 28)

−

180

250

mV

IOUT

Output Current

(Note 29)

150

−

mA

ISC

Short Circuit Current Limit

VOUT = 0 V

−

195

−

mA

IQ

Quiescent Current

IOUT = 0 mA

−

0.5

0.9

mA

ISTB

Standby Current

VEN = 0 V, TJ = 25°C

−

0.1

0.5

mA

VENH

EN Pin Threshold Voltage

EN Input Voltage “H”

1.2

−

V

VENL

EN Pin Threshold Voltage

EN Input Voltage “L”

−

0.4

V

IEN

EN Pull Down Current

VEN ≤ VIN ≤ 5.5 V (Note 30)

−

10

−

nA

PSRR

Power Supply Rejection Ratio

f = 1 kHz, VIN = 4.3 V + 200 mVpp Modulation

IOUT = 150 mA

−

41

−

dB

VNOISE

Output Noise Voltage

VIN = 5.5 V, IOUT = 1 mA

f = 100 Hz to 1 MHz, COUT = 1 mF

−

125

−

mVrms

RLOW

Active Output Discharge

Resistance (A option only)

VIN = 5.5 V, VEN = 0 V (Note 30)

−

100

−

W

TSD

Thermal Shutdown Temperature

Temperature Increasing from TJ = +25°C

(Note 30)

−

175

−

°C

TSDH

Thermal Shutdown Hysteresis

Temperature Falling from TSD (Note 30)

−

25

−

°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

27. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ =TA =25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

28. Characterized when VOUT falls 99 mV below the regulated voltage and only for devices with VOUT = 3.3 V.

29. Respect SOA.

30. Guaranteed by design and characterization.

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