NCV4274CDS33R4G datasheet(4/13 Pages) ONSEMI

Part #	NCV4274CDS33R4G

Description	400 mA Low Dropout Voltage Regulator

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Manufacturer	ONSEMI [ON Semiconductor]

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NCV4274C

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4

ELECTRICAL CHARACTERISTICS

−40

°C < TJ < 150°C; VI = 13.5 V unless otherwise noted.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

REGULATOR

Output Voltage (5.0 V Version)

VQ

5 mA < IQ < 400 mA

6 V < VI < 28 V

4.9

5.0

5.1

V

Output Voltage (5.0 V Version)

VQ

5 mA < IQ < 200 mA

6 V < VI < 40 V

4.9

5.0

5.1

V

Output Voltage (3.3 V Version)

VQ

5 mA < IQ < 400 mA

4.5 V < VI < 28 V

3.23

3.3

3.37

V

Output Voltage (3.3 V Version)

VQ

5 mA < IQ < 200 mA

4.5 V < VI < 40 V

3.23

3.3

3.37

V

Current Limit (All Versions)

IQ

VQ = 90% VQTYP

400

600

−

mA

Quiescent Current

Iq

IQ = 1 mA

VQ = 5.0 V

VQ = 3.3 V

IQ = 250 mA

VQ = 5.0 V

VQ = 3.3 V

IQ = 400 mA

VQ = 5.0 V

VQ = 3.3 V

−

125

5

10

250

15

35

mA

Dropout Voltage

5.0 V Version

VDR

IQ = 250 mA,

VDR = VI − VQ

VI = 5.0 V

−

250

500

mV

Load Regulation (3.3 V and 5 V Versions)

DVQ

IQ = 5 mA to 400 mA

−

3

20

mV

Line Regulation (3.3 V and 5 V Versions)

DVQ

DVI = 12 V to 32 V

IQ = 5 mA

−

4

25

mV

Power Supply Ripple Rejection

PSRR

ƒr = 100 Hz,

Vr = 0.5 VPP

−

60

−

dB

Thermal Shutdown Temperature*

TSD

IQ = 5 mA

150

−

210

°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

*Guaranteed by design, not tested in production

Figure 2. Measuring Circuit

NCV4274C

Rload

VQ

CQ

10

mF

or

22

mF

C12

100 nF

C11

1.0

mF

VQ

IQ

Q

I

II

VI

IGND

GND

13

2,4

Figure 3. Application Circuit

Output

CQ*

CI

100 nF

GND

NCV4274C

13

2,4

Input

VQ

VI

*CQ = 10 mF for VQ ≤ 3.3 V

CQ = 22 mF for VQ ≥ 5 V

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NCV4274CDS33R4G Datasheet(PDF) 4 Page - ON Semiconductor

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