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IRG4BC30KD-SPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC30KD-SPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page Parameter Typ. Max. Units RθJC Junction-to-Case - IGBT 1.2 RθJC Junction-to-Case - Diode 2.5 RθCS Case-to-Sink, Flat, Greased Surface 0.5 °C/W RθJA Junction-to-Ambient ( PCB Mounted,steady-state)
40 Wt Weight 1.44 g Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 28 IC @ TC = 100°C Continuous Collector Current 16 ICM Pulsed Collector Current 56 A ILM Clamped Inductive Load Current 56 IF @ TC = 100°C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 58 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) IRG4BC30KD-SPbF INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFAST SOFT RECOVERY DIODE Features E G n-channel C VCES = 600V VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A Short Circuit Rated UltraFast IGBT 02/08/10 High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free Benefits Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products For hints see design tip 97003 Absolute Maximum Ratings W Thermal Resistance www.irf.com 1 D2Pak PD -95674A |
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