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IRG4BC30FD-SPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC30FD-SPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  IRG4BC30FD-SPbF 01/27/10 www.irf.com 1 VCES=600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A E G n-channel C Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. Lead-Free Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing. Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's. D2Pak Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 31 IC @ TC = 100°C Continuous Collector Current 17 A ICM Pulse Collector Current (Ref.Fig.C.T.5) c 124 ILM Clamped Inductive Load current d 124 IF @ TC = 100°C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 120 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 100 W PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 °C TSTG Storage Temperature Range Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units RθJC Junction-to-Case- IGBT ––– ––– 1.2 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– RθJA Junction-to-Ambient (PCB Mounted,steady state) g ––– ––– 40 Wt Weight ––– 2.0 (0.07) ––– g (oz.) PD - 95970A |
Similar Part No. - IRG4BC30FD-SPBF_15 |
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Similar Description - IRG4BC30FD-SPBF_15 |
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