 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRG4BC20UDPBF Datasheet(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRG4BC20UDPBF Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 10 page  IRG4BC20UDPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 27 41 IC = 6.5A Qge Gate - Emitter Charge (turn-on) ---- 4.5 6.8 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ---- 10 16 VGE = 15V td(on) Turn-On Delay Time ---- 39 ---- TJ = 25°C tr Rise Time ---- 15 ---- ns IC = 6.5A, VCC = 480V td(off) Turn-Off Delay Time ---- 93 140 VGE = 15V, RG = 50Ω tf Fall Time ---- 110 170 Energy losses include "tail" and Eon Turn-On Switching Loss ---- 0.16 ---- diode reverse recovery. Eoff Turn-Off Switching Loss ---- 0.13 ---- mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss ---- 0.29 0.3 td(on) Turn-On Delay Time ---- 38 ---- TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time ---- 17 ---- ns IC = 6.5A, VCC = 480V td(off) Turn-Off Delay Time ---- 100 ---- VGE = 15V, RG = 50Ω tf Fall Time ---- 220 ---- Energy losses include "tail" and Ets Total Switching Loss ---- 0.49 ---- mJ diode reverse recovery. LE Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package Cies Input Capacitance ---- 530 ---- VGE = 0V Coes Output Capacitance ---- 39 ---- pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ---- 7.4 ---- = 1.0MHz trr Diode Reverse Recovery Time ---- 37 55 ns TJ = 25°C See Fig. ---- 55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25°C See Fig. ---- 4.5 8.0 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge ---- 65 138 nC TJ = 25°C See Fig. ---- 124 360 TJ = 125°C 16 di/dt 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 240 ---- A/µs TJ = 25°C See Fig. During tb ---- 210 ---- TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.69 ---- V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.85 2.1 IC = 6.5A VGE = 15V ---- 2.27 ---- V IC = 13A See Fig. 2, 5 ---- 1.87 ---- IC = 6.5A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 1.4 4.3 ---- S VCE = 100V, IC = 6.5A ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V ---- ---- 1700 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 8.0A See Fig. 13 ---- 1.3 1.6 IC = 8.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
Similar Part No. - IRG4BC20UDPBF_15 |
|
Similar Description - IRG4BC20UDPBF_15 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
