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IRFTS9342PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFTS9342PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFTS9342PbF 2 www.irf.com G D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient e ––– 62.5 °C/W Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 32 40 ––– 53 66 VGS(th) Gate Threshold Voltage -1.3 ––– -2.4 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -5.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 6.8 ––– ––– S Qg Total Gate Charge ––– 12 ––– Qgs Gate-to-Source Charge ––– 1.8 ––– Qgd Gate-to-Drain Charge ––– 3.1 ––– RG Gate Resistance ––– 17 ––– Ω td(on) Turn-On Delay Time ––– 4.6 ––– tr Rise Time ––– 13 ––– td(off) Turn-Off Delay Time ––– 45 ––– tf Fall Time ––– 28 ––– Ciss Input Capacitance ––– 595 ––– Coss Output Capacitance ––– 133 ––– Crss Reverse Transfer Capacitance ––– 85 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 20 30 ns Qrr Reverse Recovery Charge ––– 11 17 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VDS = VGS, ID = -25μA VGS = -4.5V, ID = -4.6A e m Ω VDD = -15V, VGS = -10V VDS = -15V RG = 6.8 Ω VDS = -10V, ID = -4.6A VDS = -24V, VGS = 0V, TJ = 125°C μA ID = -4.6A ID = -4.6A VGS = 0V VDS = -25V VDS = -24V, VGS = 0V TJ = 25°C, IF = -4.6A, VDD = -24V di/dt = 100A/μs eà TJ = 25°C, IS = -4.6A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions ƒ = 1.0KHz Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = -10V, ID = -5.8A e ––– ––– -46 ––– ––– -2.0 MOSFET symbol nA ns A pF nC VGS = -10V VGS = -20V VGS = 20V |
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