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M30622M8-762FP Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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M30622M8-762FP Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
5 / 276 page Mitsubishi microcomputers M16C / 62 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description 5 Item Performance Number of basic instructions 91 instructions Shortest instruction execution time 62.5ns(f(XIN)=16MHZ, VCC=5V) 100ns (f(XIN)=10MHZ, VCC=3V, with software one-wait) : Mask ROM, flash memory 5V version 142.9ns (f(XIN)=7MHZ, VCC=3V, with software one-wait) : One-time PROM version Memory ROM (See the figure 1.1.4. ROM Expansion) capacity RAM 3K to 20K bytes I/O port P0 to P10 (except P85) 8 bits x 10, 7 bits x 1 Input port P85 1 bit x 1 Multifunction TA0, TA1, TA2, TA3, TA4 16 bits x 5 timer TB0, TB1, TB2, TB3, TB4, TB5 16 bits x 6 Serial I/O UART0, UART1, UART2 (UART or clock synchronous) x 3 SI/O3, SI/O4 (Clock synchronous) x 2 A-D converter 10 bits x (8 + 2) channels D-A converter 8 bits x 2 DMAC 2 channels (trigger: 24 sources) CRC calculation circuit CRC-CCITT Watchdog timer 15 bits x 1 (with prescaler) Interrupt 25 internal and 8 external sources, 4 software sources, 7 levels Clock generating circuit 2 built-in clock generation circuits (built-in feedback resistor, and external ceramic or quartz oscillator) Supply voltage 4.2 to 5.5V (f(XIN)=16MHZ, without software wait) : Mask ROM, flash memory 5V version 4.5 to 5.5V (f(XIN)=16MHZ, without software wait) : One-time PROM version 2.7 to 5.5V (f(XIN)=10MHZ with software one-wait) : Mask ROM, flash memory 5V version 2.7 to 5.5V (f(XIN)=7MHZ with software one-wait) : One-time PROM version Power consumption 25.5mW (f(XIN) = 10MHZ, VCC=3V with software one-wait) I/O I/O withstand voltage 5V characteristics Output current 5mA Memory expansion Available (to 1.2M bytes or 4M bytes) Device configuration CMOS high performance silicon gate Package 100-pin plastic mold QFP Table 1.1.1. Performance outline of M16C/62 group Performance Outline Table 1.1.1 is a performance outline of M16C/62 group. |
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