MBR40250G_15 datasheet(2/7 Pages) ONSEMI

Part #	MBR40250G

Description	Switch-mode Schottky Power Rectifier 250 V, 40 A

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Manufacturer	ONSEMI [ON Semiconductor]

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MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

250

V

Average Rectified Forward Current

(Rated VR) TC = 82°C MBR40250, MBR40250T, MBRB40250T

(Rated VR) TC = 46°C MBRF40250T

IF(AV)

40

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz) TC = 82°C MBR40250, MBR40250T, MBRB40250T

(Rated VR, Square Wave, 20 kHz) TC = 46°C MBRF40250T

IFRM

80

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

150

A

Storage Temperature

Tstg

*65 to +175

°C

Operating Junction Temperature

TJ

*65 to +150

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/

ms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Thermal Resistance

Junction−to−Case

MBR40250(T) and MBRB40250T

MBRF40250

Junction−to−Ambient

MBR40250(T)

MBRF40250

MBRB40250T

RqJC

RqJA

2.0

3.0

60

50

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (Note 1)

IF = 20 A, TC = 25°C

IF = 20 A, TC = 125°C

IF = 40 A, TC = 25°C

IF = 40 A, TC = 125°C

VF

0.86

0.71

0.97

0.86

V

Maximum Instantaneous Reverse Current (Note 1)

Rated DC Voltage, TC = 25°C

Rated DC Voltage, TC = 125°C

IR

0.25

30

mA

Maximum Reverse Recovery Time

IF = 1.0 A, di/dt = 50 A/ms, TC = 25°C

trr

35

ns

DYNAMIC CHARACTERISTICS

Capacitance

VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz

CT

500

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

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MBR40250G Datasheet(PDF) 2 Page - ON Semiconductor

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