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IRFS7430-7PPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFS7430-7PPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFS7430-7PPbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 Absolute Maximium Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 522 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 369 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 240 IDM Pulsed Drain Current 1200* PD @TC = 25°C Maximum Power Dissipation 375 W Linear Derating Factor 2.5 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 764 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 1454 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.4 RJA Junction-to-Ambient ––– 40 °C/W Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 26 ––– mV/°C Reference to 25°C, ID = 2mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.55 0.75 VGS = 10V, ID = 100A ––– 0.93 ––– VGS = 6V, ID = 50A VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =40 V, VGS = 0V ––– ––– 150 VDS =40V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.2 ––– m Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 153µH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 1403A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 54A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf *Pulse drain current is limited at 960A by source bonding technology. |
Similar Part No. - IRFS7430-7PPBF_15 |
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Similar Description - IRFS7430-7PPBF_15 |
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