PBSS5350T_15 datasheet(5/10 Pages) PHILIPS

Part #	PBSS5350T

Description	50 V, 3 A PNP low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 10 page

2004 Jan 13

5

NXP Semiconductors

Product data sheet

50 V, 3 A

PNP low VCEsat (BISS) transistor

PBSS5350T

handbook, halfpage

0

1000

200

400

600

800

MLD885

−10−1

−1

(1)

−10

IC (mA)

hFE

−102

−103

−104

(3)

(2)

Fig.2

DC current gain as a function of collector

current; typical values.

VCE = −2 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MLD886

0

−1200

−400

−800

−10−1

−1

−10

IC (mA)

VBE

(mV)

−102

−103

−104

(1)

(3)

(2)

Fig.3

Base-emitter voltage as a function of

collector current; typical values.

VCE = −2 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

MLD887

−100

−1300

−500

−900

−10−1

−1

−10

IC (mA)

VBEsat

(mV)

−102

−103

−104

(1)

(3)

(2)

Fig.4

Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

MLD888

−100

−1300

−500

−900

−10−1

−1

−10

IC (mA)

VBEsat

(mV)

−102

−103

−104

(1)

(3)

(2)

Fig.5

Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

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