PDTD113ZT_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 23 March 2009

2 of 9

NXP Semiconductors

PDTD113ZT

NPN 500 mA resistor-equipped transistor; R1 = 1 k

Ω, R2 = 10 kΩ

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

input (base)

2

GND (emitter)

3

output (collector)

12

3

sym007

3

2

1

R1

R2

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PDTD113ZT

-

plastic surface-mounted package; 3 leads

SOT23

Table 4.

Marking codes

Type number

Marking code[1]

PDTD113ZT

*7V

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

5

V

input voltage

positive

-

+10

V

negative

-

−5V

output current

-

500

mA