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PDTC144VMB Datasheet(PDF) 5 Page - NXP Semiconductors |
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PDTC144VMB Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 11 page PDTC144VMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 June 2012 5 of 11 NXP Semiconductors PDTC144VMB NPN resistor-equipped transistor; R1 = 47 k Ω, R2 = 10 kΩ VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C Fig 4. DC current gain as a function of collector current; typical values Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values VCE = 0.3 V (1) Tamb = -40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = 5 V (1) Tamb = -40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 6. On-state input voltage as a function of collector current; typical values Fig 7. Off-state input voltage as a function of collector current; typical values IC (mA) 10−1 102 10 1 006aaa099 102 10 103 hFE 1 (1) (2) (3) IC (mA) 1102 10 006aaa100 10−1 1 VCEsat (V) 10−2 (1) (3) (2) 006aaa101 IC (mA) 10−1 102 10 1 10 VI(on) (V) 1 (1) (2) (3) 006aaa102 IC (mA) 10−1 10 1 10 VI(off) (V) 1 (1) (2) (3) |
Similar Part No. - PDTC144VMB_15 |
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Similar Description - PDTC144VMB_15 |
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