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IRFR8314PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFR8314PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 01, 2014 IRFR8314PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 1.6 2.2 m VGS = 10V, ID = 90A ––– 2.6 3.1 VGS = 4.5V, ID = 72A VGS(th) Gate Threshold Voltage 1.2 1.7 2.2 V VDS = VGS, ID = 100µA VGS(th)/TJ Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =24 V, VGS = 0V ––– ––– 150 VDS =24V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 189 ––– ––– S VDS = 15V, ID =72A Qg Total Gate Charge ––– 36 54 Qgs1 Pre-Vth Gate-to-Source Charge ––– 10 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 7.7 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 10 ––– ID = 72A Qgodr Gate Charge Overdrive ––– 8.3 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 20 ––– RG Gate Resistance ––– 2.0 ––– td(on) Turn-On Delay Time ––– 19 ––– VDD = 15V tr Rise Time ––– 98 ––– ns ID = 72A td(off) Turn-Off Delay Time ––– 28 ––– RG= 1.8 tf Fall Time ––– 30 ––– VGS = 4.5V Ciss Input Capacitance ––– 4945 ––– VGS = 0V Coss Output Capacitance ––– 908 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 493 ––– ƒ = 1.0MHz Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 180 mJ EAS (tested) Single Pulse Avalanche Energy Tested Value 279 IA Avalanche Current 72 A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 179 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 357 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C,IS = 72A,VGS = 0V trr Reverse Recovery Time ––– 31 47 ns TJ = 25°C IF = 72A ,VDD=15V Qrr Reverse Recovery Charge ––– 87 130 nC di/dt = 360A/µs |
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