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PBSS5330PA Datasheet(PDF) 10 Page - NXP Semiconductors |
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PBSS5330PA Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 16 page NXP Semiconductors PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor PBSS5330PA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 7 April 2015 10 / 16 006aac042 102 10 1 10- 1 10- 2 - 10- 1 - 1 - 10 - 102 - 103 - 104 RCEsat (Ω) IC (mA) (1) (2) (3) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values 006aac043 102 10 1 10- 1 10- 2 - 10- 1 - 1 - 10 - 102 - 103 - 104 RCEsat (Ω) IC (mA) 103 (1) (2) (3) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig. 13. Collector-emitter saturation resistance as a function of collector current; typical values |
Similar Part No. - PBSS5330PA_15 |
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Similar Description - PBSS5330PA_15 |
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