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PBSS5330PA Datasheet(PDF) 5 Page - NXP Semiconductors |
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PBSS5330PA Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 16 page NXP Semiconductors PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor PBSS5330PA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 7 April 2015 5 / 16 006aab980 10 1 102 103 Zth(j-a) (K/W) 10- 1 10- 5 10 10- 2 10- 4 102 10- 1 tp (s) 10- 3 103 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 FR4 PCB, mounting pad for collector 1 cm2 Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac000 10 1 102 103 Zth(j-a) (K/W) 10- 1 10- 5 10 10- 2 10- 4 102 10- 1 tp (s) 10- 3 103 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 FR4 PCB, mounting pad for collector 6 cm2 Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values |
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Similar Description - PBSS5330PA_15 |
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