PBSS5240Z_15 datasheet(6/14 Pages) PHILIPS

Part #	PBSS5240Z

Description	40 V, 2 A PNP low VCEsat (BISS) transistor

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NXP Semiconductors

PBSS5240Z

40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240Z

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Product data sheet

15 October 2014

6 / 14

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = -32 V; IE = 0 A; Tamb = 25 °C

-

-100

nA

ICBO

collector-base cut-off

current

VCB = -32 V; IE = 0 A; Tj = 150 °C

-

-50

µA

ICES

collector-emitter cut-off

current

VCE = -32 V; VBE = 0 V; Tamb = 25 °C

-

-100

nA

IEBO

emitter-base cut-off

current

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-

-100

nA

VCE = -5 V; IC = -1 mA; Tamb = 25 °C

300

-

VCE = -5 V; IC = -500 mA; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C

215

-

VCE = -5 V; IC = -1 A; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C

145

-

hFE

DC current gain

VCE = -5 V; IC = -2 A; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C; pulsed

55

-

IC = -100 mA; IB = -1 mA; Tamb = 25 °C

-

-140

mV

IC = -500 A; IB = -50 mA; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C

-

-170

mV

IC = -1 A; IB = -100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-320

mV

VCEsat

collector-emitter

saturation voltage

IC = -2 A; IB = -200 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-650

mV

RCEsat

collector-emitter

saturation resistance

IC = -1 A; IB = -100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

320

mΩ

VBEsat

base-emitter saturation

voltage

IC = -1 A; IB = -100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-1.2

V

VBEon

base-emitter turn-on

voltage

VCE = -5 V; IC = -1 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-1.1

V

fT

transition frequency

VCE = -10 V; IC = -50 mA; f = 100 MHz;

Tamb = 25 °C

150

-

MHz

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

12

pF

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