PBSS5230T_15 datasheet(3/10 Pages) PHILIPS

Part #	PBSS5230T

Description	30 V, 2 A PNP low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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PBSS5230T

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Product data sheet

Rev. 2 — 4 June 2012

3 of 10

NXP Semiconductors

PBSS5230T

30 V, 2 A PNP low VCEsat (BISS) transistor

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

7.

Characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

-

417

K/W

[2]

-

260

K/W

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =-30 V; IE =0 A; Tamb = 25 °C

-

-100

nA

VCB =-30 V; IE =0 A; Tj = 150 °C

-

-50

µA

IEBO

emitter-base cut-off

current

VEB =-4V; IC =0A; Tamb = 25 °C

-

-100

nA

hFE

DC current gain

VCE =-2V; IC =-100mA; Tamb = 25 °C

300

450

-

VCE =-2V; IC =-1A; pulsed;

tp ≤ 300 µs; δ≤ 0.02 ; Tamb =25 °C

200

290

-

VCE =-2V; IC =-2A; pulsed;

tp ≤ 300 µs; δ≤ 0.02 ; Tamb =25 °C

100

180

-

VCEsat

collector-emitter

saturation voltage

IC =-500mA; IB =-50 mA; Tamb =25°C

-

-70

-110

mV

IC =-1A; IB =-50 mA; Tamb = 25 °C

-

-140

-225

mV

IC =-2A; IB =-200 mA; Tamb = 25 °C

-

-240

-350

mV

RCEsat

collector-emitter

saturation resistance

IC =-500mA; IB = -50 mA; pulsed;

tp ≤ 300 µs; δ≤ 0.02 ; Tamb =25 °C

-

160

220

Ω

VBEsat

base-emitter saturation

voltage

IC =-2A; IB = -50 mA; pulsed;

tp ≤ 300 µs; δ≤ 0.02 ; Tamb =25 °C

---1.1

V

VBEon

base-emitter turn-on

voltage

VCE =-2V; IC =-100mA; Tamb = 25 °C

-

-0.75

V

fT

transition frequency

VCE =-10 V; IC = -100 mA;

f=100MHz; Tamb =25 °C

100

200

-

MHz

Cc

collector capacitance

VCB =-10 V; IE =0 A; ie =0A;

f=1MHz; Tamb =25°C

-

2328pF

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