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PBSS4330PA Datasheet(PDF) 11 Page - NXP Semiconductors |
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PBSS4330PA Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 16 page NXP Semiconductors PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330PA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 7 April 2015 11 / 16 11. Test information 006aaa003 IBon (100 %) IB input pulse (idealized waveform) IBoff 90 % 10 % IC (100 %) IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff Fig. 14. BISS transistor switching time definition RC R2 R1 DUT mlb826 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC Fig. 15. Test circuit for switching times |
Similar Part No. - PBSS4330PA_15 |
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Similar Description - PBSS4330PA_15 |
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