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2SA2202-TD-E Datasheet(PDF) 2 Page - ON Semiconductor |
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2SA2202-TD-E Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page 2SA2202 No.A0583-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current IB --400 mA Collector Dissipation PC When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=--80V, IE=0A --1 μA Emitter Cutoff Current IEBO VEB=--4V, IC=0A --1 μA DC Current Gain hFE VCE=--5V, IC=--100mA 200 400 Gain-Bandwidth Product fT VCE=--10V, IC=--500mA 300 MHz Output Capacitance Cob VCB=--10V, f=1MHz 23 pF Collector to Emitter Saturation Voltage VCE(sat) IC=--1A, IB=--100mA --120 --240 mV Base to Emitter Saturation Voltage VBE(sat) IC=--1A, IB=--100mA --0.85 --1.2 V Collector to Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --100 V Collector to Emitter Breakdown Voltage V(BR)CES IC=--100μA, RBE=0Ω --100 V V(BR)CEO IC=--1mA, RBE=∞ --100 V Emitter to Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --7 V Turn-ON Time ton See specified Test Circuit. 40 ns Storage Time tstg 600 ns Fall Time tf 30 ns Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SA2202-TD-E PCP 1,000pcs./reel Pb Free VR RL=100Ω VCC= --50V VBE=5V IC=10IB1= --10IB2= --0.5A ++ 50 Ω INPUT OUTPUT RB 220 μF 470 μF PW=20 μs IB1 IB2 D.C. ≤1% Base to Emitter Voltage, VBE -- V IC -- VBE IC -- VCE Collector to Emitter Voltage, VCE -- V 0 --0.4 --0.8 --1.2 --1.6 --2.0 0 --0.1 --0.2 --0.3 --0.4 --0.5 IB= --5mA --20mA --60mA --120mA --80mA --100mA IT11879 --40mA --2.0 --1.6 --0.8 --0.4 --1.2 --1.8 --1.4 --0.6 --0.2 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 IT11880 VCE= --5V |
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