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2SA2040 Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2SA2040
Description  Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SA2040 Datasheet(HTML) 2 Page - ON Semiconductor

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2SA2040 / 2SC5707
No.6913-2/10
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Base Current
IB
(--)2
A
Collector Dissipation
PC
1.0
W
Tc=25°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
μA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)500mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)500mA
(290)330
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(50)28
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=(--)3.5A, IB=(--)175mA
(--230)160
(--390)240
mV
VCE(sat)2
IC=(--)2A, IB=(--)40mA
(--240)110
(--400)170
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)40mA
(--)0.83
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=(--)100μA, RBE=0Ω
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
(40)30
ns
Storage Time
tstg
(225)420
ns
Fall Time
tf
25
ns
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA2040-E
TP
500pcs./bag
Pb Free
2SC5707-E
TP
500pcs./bag
2SA2040-TL-E
TP-FA
700pcs./reel
2SC5707-TL-E
TP-FA
700pcs./reel
+
+
50
Ω
INPUT
OUTPUT
VR
RB
RL
VCC=25V
100
μF
470
μF
VBE= --5V
PW=20
μs
IB1
IB2
D.C.
≤1%
20IB1= --20IB2=IC=2.5A
For PNP, the polarity is reversed.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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