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2SA2040 Datasheet(PDF) 2 Page - ON Semiconductor |
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2SA2040 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 10 page 2SA2040 / 2SC5707 No.6913-2/10 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current IB (--)2 A Collector Dissipation PC 1.0 W Tc=25°C15 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 560 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)500mA (290)330 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (50)28 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=(--)3.5A, IB=(--)175mA (--230)160 (--390)240 mV VCE(sat)2 IC=(--)2A, IB=(--)40mA (--240)110 (--400)170 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)40mA (--)0.83 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100μA, RBE=0Ω (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V Turn-On Time ton See specified Test Circuit. (40)30 ns Storage Time tstg (225)420 ns Fall Time tf 25 ns Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SA2040-E TP 500pcs./bag Pb Free 2SC5707-E TP 500pcs./bag 2SA2040-TL-E TP-FA 700pcs./reel 2SC5707-TL-E TP-FA 700pcs./reel + + 50 Ω INPUT OUTPUT VR RB RL VCC=25V 100 μF 470 μF VBE= --5V PW=20 μs IB1 IB2 D.C. ≤1% 20IB1= --20IB2=IC=2.5A For PNP, the polarity is reversed. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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