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IRFHM3911PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFHM3911PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRFHM3911TRPbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 1, 2014 D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 111 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 92 115 m VGS = 10V, ID = 6.3A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 35µA VGS(th) Gate Threshold Voltage Coefficient ––– -7.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ=125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 20 ––– ––– S VDS = 25V, ID = 6.3A Qg Total Gate Charge ––– 17 26 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.5 ––– VDS = 50V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC VGS = 10V Qgd Gate-to-Drain Charge ––– 5.4 ––– ID = 6.3A Qgodr Gate Charge Overdrive ––– 7.7 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 6.8 ––– Qoss Output Charge ––– 5.9 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 3.8 ––– td(on) Turn-On Delay Time ––– 5.0 ––– VDD = 50V, VGS = 10V tr Rise Time ––– 5.8 ––– ns ID = 6.3A td(off) Turn-Off Delay Time ––– 16 ––– RG=1.8 tf Fall Time ––– 5.1 ––– Ciss Input Capacitance ––– 760 ––– VGS = 0V Coss Output Capacitance ––– 73 ––– pF VDS = 50V Crss Reverse Transfer Capacitance ––– 13 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. EAS Single Pulse Avalanche Energy ––– 41 IAR Avalanche Current ––– 6.3 Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 11 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 36 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.3A, VGS = 0V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = 6.3A, VDD = 50V Qrr Reverse Recovery Charge ––– 381 571 nC di/dt = 500A/µs Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 4.3 RJC (Top) Junction-to-Case ––– 40 °C/W RJA Junction-to-Ambient ––– 45 RJA (<10s) Junction-to-Ambient ––– 31 Thermal Resistance |
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