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IRFHM3911PBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRFHM3911PBF
Description  Compatible with Existing Surface Mount Techniques
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFHM3911PBF Datasheet(HTML) 2 Page - International Rectifier

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IRFHM3911TRPbF
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 1, 2014
D
S
G
Static @ TJ = 25°C (unless otherwise specified)
  
 
 
Parameter
Min.
Typ.
Max.
Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
BVDSS/TJ
Breakdown Voltage Temp. Coefficient
–––
111
–––
mV/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
92
115
m
 VGS = 10V, ID = 6.3A 
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 35µA
VGS(th)
Gate Threshold Voltage Coefficient
–––
-7.6
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ=125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
gfs
Forward Transconductance
20
–––
–––
S
VDS = 25V, ID = 6.3A
Qg
Total Gate Charge
–––
17
26
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.5
–––  
VDS = 50V
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.4
–––
nC
VGS = 10V
Qgd
Gate-to-Drain Charge
–––
5.4
–––  
ID = 6.3A
Qgodr
Gate Charge Overdrive
–––
7.7
–––  
Qsw
Switch Charge (Qgs2 + Qgd)
–––
6.8
–––  
Qoss
Output Charge
–––
5.9
–––
nC
VDS = 16V, VGS = 0V
RG
Gate Resistance
–––
3.8
–––
 
td(on)
Turn-On Delay Time
–––
5.0
–––
VDD = 50V, VGS = 10V
tr
Rise Time
–––
5.8
–––
ns
ID = 6.3A
td(off)
Turn-Off Delay Time
–––
16
–––  
RG=1.8
tf
Fall Time
–––
5.1
–––  
Ciss
Input Capacitance
–––
760
–––
VGS = 0V
Coss
Output Capacitance
–––
73
–––
pF
VDS = 50V
Crss
Reverse Transfer Capacitance
–––
13
–––  
ƒ = 1.0MHz
Avalanche Characteristics
  
 
 
Parameter
Typ.
Max.
EAS
Single Pulse Avalanche Energy 
–––
41
IAR
Avalanche Current 
–––
6.3
Diode Characteristics
  
 
 
Parameter
Min.
Typ.
Max.
Units
Conditions
IS
Continuous Source Current
–––
–––
11
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
36
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 6.3A, VGS = 0V 
trr
Reverse Recovery Time
–––
47
71
ns
TJ = 25°C, IF = 6.3A, VDD = 50V
Qrr
Reverse Recovery Charge
–––
381
571
nC
di/dt = 500A/µs 
  
 
Parameter
Typ.
Max.
Units
RJC (Bottom) Junction-to-Case 
–––
4.3
RJC (Top)
Junction-to-Case 
–––
40
°C/W
RJA
Junction-to-Ambient 
–––
45
RJA (<10s)
Junction-to-Ambient 
–––
31
Thermal Resistance


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