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NJD1718 Datasheet(PDF) 1 Page - ON Semiconductor

Part # NJD1718
Description  PNP Silicon DPAK For Surface Mount Applications
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NJD1718 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 4
1
Publication Order Number:
NJD1718/D
NJD1718, NJVNJD1718
Power Transistors
PNP Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier and power switching
applications.
Features
Low Collector−Emitter Saturation Voltage
High Switching Speed
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Base Voltage
VCB
−50
Vdc
Collector−Emitter Voltage
VCEO
−50
Vdc
Emitter−Base Voltage
VEB
−5
Vdc
Collector Current − Continuous
IC
−2
Adc
Collector Current − Peak
ICM
−3
Adc
Base Current
IB
−0.4
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
15
0.1
W
W/°C
Total Device Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
PD
1.68
0.011
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 2)
RqJC
RqJA
10
89.3
°C/W
2. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
Device
Package
Shipping
ORDERING INFORMATION
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
MARKING DIAGRAM
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Device
DPAK
CASE 369C
STYLE 1
AYWW
J
1718G
1 2
3
4
http://onsemi.com
NJD1718T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
BASE
3
EMITTER
COLLECTOR
2, 4
NJVNJD1718T4G
DPAK
(Pb−Free)
2500 / Tape & Reel


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