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MJL3281AG Datasheet(PDF) 4 Page - ON Semiconductor

Part # MJL3281AG
Description  Complementary Bipolar Power Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJL3281AG Datasheet(HTML) 4 Page - ON Semiconductor

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MJL3281A (NPN) MJL1302A (PNP)
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Typical Base−Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Typical Base−Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
PNP MJL1302A
NPN MJL3281A
10
1.0
0.1
100
10
1.0
0.1
TJ = 25°C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
10
1.0
0.1
100
10
1.0
0.1
TJ = 25°C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
Figure 9. MJL1302A Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. MJL3281A Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
10000
1000
100
100
10
1.0
0.1
10000
1000
100
100
10
1.0
0.1
TJ = 25°C
ftest = 1 MHz
Cib
Cob
TJ = 25°C
ftest = 1 MHz
Cib
Cob
PNP MJL1302A
NPN MJL3281A
Figure 11. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC −VCE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150°C; TC is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
100
10
1.0
0.1
100
10
1.0
1000
10 ms
50 ms
250 ms
1 sec


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