MJF15030G datasheet(3/6 Pages) ONSEMI

Part #	MJF15030G

Description	Complementary Power Transistors

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MJF15030 (NPN), MJF15031 (PNP)

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3

Figure 2. Forward Bias Safe Operating Area

100

ms

5 ms

dc

20

3

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5

200

5

3

10

2

0.1

0.03

WIREBOND LIMIT

THERMAL LIMIT

SECONDARY BREAKDOWN

LIMIT @ TC = 25°C

10

30

50

70

1

0.02

100

27

20

0.05

0.2

0.3

0.5

150

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 2 and 3 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

_C. TJ(pk) may be calculated from the data in

Figure 1. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

IC, COLLECTOR CURRENT (AMP)

60

f, FREQUENCY (MHz)

0

Figure 3. Reverse Bias Switching Safe

Operating Area

Figure 4. Capacitances

10

VR, REVERSE VOLTAGE (VOLTS)

30

50

100

Figure 5. Small−Signal Current Gain

Figure 6. Current Gain — Bandwidth Product

1000

50

500

1.5

Cib (NPN)

150

100

200

10

7

90

20

50

100

NPN

5

3

30

5

50

10

20

100

0.1

5

10

0.5

2

0.2

1

5 V

8

100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

110

5

2

1

130

150

3

0

120

140

VBE(off) = 9 V

IC/IB = 10

TC = 25°C

VCE = 10 V

IC = 0.5 A

TC = 25°C

10

0.5

5

10

13

0.7

27

30

20

Cib (PNP)

PNP

(NPN)

(PNP)

0 V

1.5 V

3 V

Cob (PNP)

Cob (NPN)

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