IRFH6200PBF_15 datasheet(6/9 Pages) IRF

Part #	IRFH6200PBF

Description	CHARGE AND DISCHARGE SWITCH FOR BETTERY APPLICATION

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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6 / 9 page

IRFH6200TRPbF

6

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May 19, 2015

Fig 15.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Fig 18a. Gate Charge Test Circuit

Fig 18b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 16b. Unclamped Inductive Waveforms

Fig 16a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

VDS

Pulse Width ≤ 1 µs

Duty Factor≤ 0.1

RD

VGS

RG

D.U.T.

10V

+

-VDD

VGS

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• LowLeakageInductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

1K

VCC

DUT

0

L

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