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IRFH5015PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH5015PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFH5015PbF 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 25.5 31 mΩ VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 38 ––– ––– S Qg Total Gate Charge ––– 36 54 Qgs1 Pre-Vth Gate-to-Source Charge ––– 13 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.6 ––– Qgd Gate-to-Drain Charge ––– 11 ––– Qgodr Gate Charge Overdrive ––– 7.4 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 15.6 ––– Qoss Output Charge ––– 14 ––– nC RG Gate Resistance ––– 1.7 ––– Ω td(on) Turn-On Delay Time ––– 9.4 ––– tr Rise Time ––– 9.7 ––– td(off) Turn-Off Delay Time ––– 14 ––– tf Fall Time ––– 3.4 ––– Ciss Input Capacitance ––– 2300 ––– Coss Output Capacitance ––– 205 ––– Crss Reverse Transfer Capacitance ––– 47 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 52 78 ns Qrr Reverse Recovery Charge ––– 550 825 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance MOSFET symbol nA ns A pF nC VDS = 75V ––– VGS = 20V VGS = -20V ––– ––– 220 ––– ––– 56 Conditions VGS = 0V, ID = 250uA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 34A e Conditions Max. 230 34 ƒ = 1.0MHz TJ = 25°C, IF = 34A, VDD = 75V di/dt = 500A/μs eà TJ = 25°C, IS = 34A, VGS = 0V e showing the integral reverse p-n junction diode. ––– RG=1.3Ω VDS = 50V, ID = 34A VDS = 150V, VGS = 0V, TJ = 125°C μA ID = 34A ID = 34A VGS = 0V VDS = 50V VDS = VGS, ID = 150μA VGS = 10V Typ. VDS = 150V, VGS = 0V VDS = 16V, VGS = 0V VDD = 75V, VGS = 10V Thermal Resistance Parameter Typ. Max. Units RθJC-mb Junction-to-Mounting Base 0.5 0.8 RθJC (Top) Junction-to-Case f ––– 15 °C/W RθJA Junction-to-Ambient g ––– 35 RθJA (<10s) Junction-to-Ambient g ––– 22 |
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