BUJ105AB_15 datasheet(6/9 Pages) PHILIPS

Part #	BUJ105AB

Description	Silicon Diffused Power Transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ105AB

Fig.13. Transient thermal impedance.

Z

th j-mb = f(t); parameter δ = tp/T

Fig.14. Test circuit for reverse bias safe operating

area.

V

clamp < 700V; Vcc = 150V; -Vbe = 5V,3V & 1V;

L

B = 1µH; LC = 200µH.

Fig.15. Reverse bias safe operating area (T

j < Tjmax)

for -V

BE = 5V,3V & 1V.

10

Zth(j-mb)

(K/W)

1

10-1

10-2

δ =

0.5

0.2

0.1

Single pulse

0.05

0.02

tp

T

P

t

T

δ =

1

10

10-1

10-2

10-3

10-4

tp (s)

0

100

200

300

400

500

600

700

800

0

1

2

3

4

5

6

7

8

9

10

11

VCEclamp/V

IC/A

-5V

-3V

-1V

LB

IBon

-VBB

LC

T.U.T.

VCC

PROBE POINT

VCL(RBSOAR)

October 2001

5

Rev 1.000

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