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FZ06BIA099FS Datasheet(PDF) 5 Page - Vincotech |
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FZ06BIA099FS Datasheet(HTML) 5 Page - Vincotech |
5 / 8 page FZ06BIA099FS target datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Value Conditions Characteristic Values Tj=25°C 1,60 Tj=150°C 1,90 Tj=25°C tbd Tj=150°C Tj=25°C tbd Tj=150°C Tj=25°C tbd Tj=150°C di(rec)max Tj=25°C tbd /dt Tj=150°C Tj=25°C tbd Tj=150°C Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 4K/W Tj=25°C 90 Tj=125°C 200 Tj=25°C 2,5 3 3,5 Tj=125°C Tj=25°C 200 Tj=125°C Tj=25°C 25000 Tj=125°C Tj=25°C 15 Tj=125°C Tj=25°C 12 Tj=125°C Tj=25°C 75 Tj=125°C Tj=25°C 6 Tj=125°C Tj=25°C tbd Tj=125°C Tj=25°C tbd Tj=125°C 600 0,0012 0 VDS=VGS 4 4 18 18 480 480 20 100 400 f=1MHz 0 10 10 10 13 0 Rgon=1,7 Ω Thermal grease thickness ≤50um λ = 1 W/mK Qg Qrr trr td(ON) Rds(on) Rgoff=1,7 Ω Crss V(GS)th Igss tr td(OFF) Eon Qgd RthJH VF Peak reverse recovery current Zero Gate Voltage Drain Current Idss Static drain to source ON resistance IRRM Reverse recovered charge Erec Gate threshold voltage Eoff Ciss Coss Qgs Buck MOSFET Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Diode forward voltage V μC mWs A/ μs m Ω 1,30 pF ns 100 mWs 2660 Rgon=1,7 Ω Turn off delay time Rise Time Gate to drain charge Gate to source charge Turn-off energy loss per pulse Fall time 18 Buck Diode Input capacitance Gate to Source Leakage Current Turn On Delay Time tf Output capacitance Turn-on energy loss per pulse Total gate charge Reverse transfer capacitance Thermal resistance chip to heatsink per chip nA nC nA ns A V Tj=25°C 119 61 154 14 Tj=25°C K/W copyright by Vincotech 5 Revision: 1 |
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