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BCW69 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BCW69
Description  PNP general purpose transistors
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCW69 Datasheet(HTML) 2 Page - NXP Semiconductors

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2004 Feb 06
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BCW69; BCW70
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW71 and BCW72.
MARKING
Note
1.
* = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER
MARKING CODE(1)
BCW69
H1*
BCW70
H2*
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BCW69
plastic surface mounted package; 3 leads
SOT23
BCW70
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−50
V
VCEO
collector-emitter voltage
open base; IC = −2 mA
−45
V
VEBO
emitter-base voltage
open collector
−5
V
IC
collector current (DC)
−100
mA
ICM
peak collector current
−200
mA
IBM
peak base current
−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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