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PYA28C64E-25CWMB Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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PYA28C64E-25CWMB Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 10 page PYA28C64 - 8K x 8 EEPROM Page 3 Document # EEPROM105 REV B DC ELECTRICAL CHARACTERISTICS (Over Recommended Operating Temperature & Supply Voltage)(2) Sym Parameter Test Conditions PYA28C64 Unit Min Max V IH Input High Voltage 2.0 V CC + 0.3 V V IL Input Low Voltage -0.5(3) 0.8 V V HC CMOS Input High Voltage V CC - 0.2 V CC + 0.5 V V LC CMOS Input Low Voltage -0.5(3) 0.2 V V OL Output Low Voltage (TTL Load) I OL = +2.1 mA, VCC = Min 0.45 V V OH Output High Voltage (TTL Load) I OH = -0.4 mA, VCC = Min 2.4 V I LI Input Leakage Current V CC = Max V IN = GND to VCC -10 +10 µA I LO Output Leakage Current V CC = Max, CE = VIH, V OUT = GND to VCC -10 +10 µA I SB Standby Power Supply Current (TTL Input Levels) CE ≥ V IH, OE = VIL, V CC = Max, f = Max, Outputs Open — 5 mA I SB1 Standby Power Supply Current (CMOS Input Levels) CE ≥ V HC, V CC = Max, f = 0, Outputs Open, V IN ≤ VLC or VIN ≥ VHC — 150 µA I CC Supply Current CE = OE = V IL, WE = V IH, All I/O's = Open, Inputs = V CC = 5.5V — 60 mA Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3.TransientinputswithV IL and IIL not more negative than -3.0V and -100mA, respectively, are permissible for pulse widths up to 20ns. 4. This parameter is sampled and not 100% tested. |
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