PYA28C16B-15LMB datasheet(3/10 Pages) PYRAMID

Part #	PYA28C16B-15LMB

Description	Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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PYA28C16B - 2K x 8 EEPROM

Page 3

Document # EEPROM109 REV OR

DC ELECTRICAL CHARACTERISTICS

(Over Recommended Operating Temperature & Supply Voltage)(2)

Sym Parameter

Test Conditions

PYA28C16B

Unit

Min

Max

V

IH

Input High Voltage

2.0

V

CC + 0.3

V

IL

Input Low Voltage

-0.5(3)

0.8

V

HC

CMOS Input High Voltage

V

CC - 0.2

V

CC + 0.5

V

LC

CMOS Input Low Voltage

-0.5(3)

0.2

V

OL

Output Low Voltage (TTL Load)

I

OL = +2.1 mA, VCC = Min

0.45

V

OH

Output High Voltage (TTL Load)

I

OH = -0.4 mA, VCC = Min

2.4

V

I

LI

Input Leakage Current

V

CC = Max

V

IN = GND to VCC

-10

+10

µA

I

LO

Output Leakage Current

V

CC = Max, CE = VIH,

V

OUT = GND to VCC

-10

+10

µA

I

SB

Standby Power Supply Current (TTL Input Levels)

CE ≥ V

IH, OE = VIL,

V

CC = Max,

f = Max, Outputs Open

—

5

mA

I

SB1

Standby Power Supply Current (CMOS Input Levels)

CE ≥ V

HC,

V

CC = Max,

f = 0, Outputs Open,

V

IN ≤ VLC or VIN ≥ VHC

—

150

µA

I

CC

Supply Current

CE = OE = V

IL,

WE = V

IH,

All I/O's = Open,

Inputs = V

CC = 5.5V

—

60

mA

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM rating conditions for extended

periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3.TransientinputswithV

IL and IIL not more negative than -3.0V and -100mA,

respectively, are permissible for pulse widths up to 20ns.

4. This parameter is sampled and not 100% tested.

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