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PYA28C16B-25LM Datasheet(PDF) 1 Page - Pyramid Semiconductor Corporation

Part # PYA28C16B-25LM
Description  Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

PYA28C16B-25LM Datasheet(HTML) 1 Page - Pyramid Semiconductor Corporation

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Document # EEPROM109 REV OR
Revised October 2012
PYA28C16B
2K X 8 EEPROM
FEATURES
Access Times of 150, 200, 250 and 350ns
Single 5V±10% Power Supply
Byte Write Cycle Time - 10 ms Maximum
Low Power CMOS:
- 60 mA Active Current
- 150 µA Standby Current
Fast Write Cycle Time - DATA Polling
CMOS & TTL Compatible Inputs and Outputs
Endurance:
- 10,000 Write Cycles
- 100,000 Write Cycles (optional)
Data Retention: 10 Years
Available in the following package:
– 24-Pin 600 mil Ceramic DIP
– 32-Pin Ceramic LCC (450x550 mils)
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
DIP (C12)
DESCRIPTION
The PYA28C16B is a 5 Volt 2Kx8 EEPROM. The PY-
A28C16B is a 16K memory organized as 2,048 words by
8 bits. Data Retention is 10 Years. The device is available
in a 24-Pin 600 mil wide Ceramic DIP and 32-Pin LCC.
LCC (L6)


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