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P4C1257L25CC Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation

Part # P4C1257L25CC
Description  ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1257L25CC Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation

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P4C1257/P4C1257L - ULTRA HIGH SPEED 256K X 1 STATIC CMOS RAMS
Page 5
Document # SRAM137 REV 01
notes:
1. Stresses greater than those listed under MAxIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAxIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
5. WE is HIGH for READ cycle.
6. CE is LOW and OE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with CE transition
LOW.
8. Transition is measured ± 200 mV from steady state voltage prior to
change,withloadingasspecifiedinFigure1. Thisparameterissampled
and not 100% tested.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
TIMIng WAVEFORM OF WRITE CYCLE nO. 1 (WE COnTROLLED)(10,11)
TIMIng WAVEFORM OF WRITE CYCLE nO. 2 (CE COnTROLLED)(10)


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