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IRFB4229PBF Datasheet(PDF) 6 Page - International Rectifier |
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IRFB4229PBF Datasheet(HTML) 6 Page - International Rectifier |
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6 / 8 page  IRFB4229PbF 6 www.irf.com Fig 19b. Unclamped Inductive Waveforms Fig 19a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01 Ω tp D.U.T L VDS + - VDD DRIVER A 15V 20V VGS Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period *** VGS = 5V for Logic Level Devices *** + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T ** * * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel 1K VCC DUT 0 L |
Similar Part No. - IRFB4229PBF |
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Similar Description - IRFB4229PBF |
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