BFU730F_15 datasheet(2/12 Pages) PHILIPS

Part #	BFU730F

Description	NPN wideband silicon germanium RF transistor

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BFU730F

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Product data sheet

Rev. 1 — 29 April 2011

2 of 12

NXP Semiconductors

BFU730F

NPN wideband silicon germanium RF transistor

1.4 Quick reference data

[1]

Tsp is the temperature at the solder point of the emitter lead.

[2]

Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).

2.

Pinning information

3.

Ordering information

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

VCBO

collector-base voltage

open emitter

-

10

V

VCEO

collector-emitter voltage

open base

-

2.8

V

VEBO

emitter-base voltage

open collector

-

1.0

V

IC

collector current

-

5

30

mA

Ptot

total power dissipation

Tsp ≤ 90 °C

[1] -

-

197

mW

hFE

DC current gain

IC =2mA; VCE =2V;

Tj =25 °C

205

380

555

CCBS

collector-base

capacitance

VCB =2V; f=1MHz

-

55

-

fF

fT

transition frequency

IC =25mA; VCE =2V;

f= 2GHz; Tamb =25 °C

-55

-

GHz

Gp(max)

maximum power gain

IC =17mA; VCE =2V;

f = 12 GHz; Tamb =25 °C

[2] -

12.5

-

dB

NF

noise figure

IC =5mA; VCE =2V;

f = 12 GHz;

Γ

S = Γopt

-1.30

-

dB

PL(1dB)

output power at 1 dB

gain compression

IC =15mA; VCE =2.5 V;

ZS =ZL =50 Ω;

f= 5.8GHz; Tamb =25 °C

-

12.5

-

dBm

Table 2.

Discrete pinning

Description

Simplified outline

Graphic symbol

1emitter

2base

3emitter

4

collector

1

2

34

mbb159

4

1, 3

2

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BFU730F

-

plastic surface-mounted flat pack package; reverse

pinning; 4 leads

SOT343F

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