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IRF9383MPBF Datasheet(PDF) 7 Page - International Rectifier |
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IRF9383MPBF Datasheet(HTML) 7 Page - International Rectifier |
7 / 10 page www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 7 IRF9383MPbF DirectFET® Board Footprint, MX Outline (Medium Size Can, X-Designation). Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®. This includes all recommendations for stencil and substrate designs. * Reverse Polarity of D.U.T for P-Channel P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * InductorCurrent CircuitLayoutConsiderations • Low Stray Inductance • Ground Plane • LowLeakageInductance Current Transformer • di/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - + + + - - - RG VDD D.U.T * Fig 20. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs G S G=GATE D=DRAIN S=SOURCE S D D D D |
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