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BFU580Q Datasheet(PDF) 9 Page - NXP Semiconductors |
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BFU580Q Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 21 page BFU580Q All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 1 — 28 April 2014 9 of 21 NXP Semiconductors BFU580Q NPN wideband silicon RF transistor Tamb =25 C. (1) VCE =3.3 V (2) VCE =5.0 V (3) VCE =8.0 V (4) VCE = 12.0 V Fig 9. Transition frequency as a function of collector current; typical values IC =20 mA; VCE =8V; Tamb =25 C. IC =30 mA; VCE =8V; Tamb =25 C. Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values |
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Similar Description - BFU580Q_15 |
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