BFU580Q_15 datasheet(9/21 Pages) PHILIPS

Part #	BFU580Q

Description	NPN wideband silicon RF transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BFU580Q

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Product data sheet

Rev. 1 — 28 April 2014

9 of 21

NXP Semiconductors

BFU580Q

NPN wideband silicon RF transistor

Tamb =25 C.

(1) VCE =3.3 V

(2) VCE =5.0 V

(3) VCE =8.0 V

(4) VCE = 12.0 V

Fig 9.

Transition frequency as a function of collector current; typical values

IC =20 mA; VCE =8V; Tamb =25 C.

IC =30 mA; VCE =8V; Tamb =25 C.

Fig 10. Gain as a function of frequency; typical values

Fig 11. Gain as a function of frequency; typical values

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