1.

Product profile

1.1 General description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323

package.

The BFU530W is part of the BFU5 family of transistors, suitable for small signal to

medium power applications up to 2 GHz.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

BFU530W

NPN wideband silicon RF transistor

Rev. 1 — 13 January 2014

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

collector-base voltage

open emitter

-

-

24

V

collector-emitter voltage

open base

-

-

12

V

shorted base

-

-

24

V

emitter-base voltage

open collector

-

-

2

V

collector current

-

10

40

mA

total power dissipation

[1] --

450

mW

DC current gain

60

95

200

collector capacitance

-

0.68

-

pF

transition frequency

-

11

-

GHz