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BFU530 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFU530 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 22 page BFU530 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 1 — 5 March 2014 2 of 22 NXP Semiconductors BFU530 NPN wideband silicon RF transistor [1] Tsp is the temperature at the solder point of the collector lead. [2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) =MSG. 2. Pinning information 3. Ordering information [1] The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520, BFU530 and BFU550 samples e) USB stick with data sheets, application notes, models, S-parameter and noise files 4. Marking Gp(max) maximum power gain IC =10 mA; VCE = 8 V; f = 900 MHz [2] - 21.5 - dB NFmin minimum noise figure IC =1 mA; VCE = 8 V; f = 900 MHz; S = opt -0.7 - dB PL(1dB) output power at 1 dB gain compression IC =15 mA; VCE =8V; ZS =ZL =50 ; f=900MHz -10 - dBm Table 1. Quick reference data …continued Tamb =25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1 collector 2base 3emitter 4emitter Table 3. Ordering information Type number Package Name Description Version BFU530 - plastic surface-mounted package; 4 leads SOT143B OM7962 - Customer evaluation kit for BFU520, BFU530 and BFU550 [1] - Table 4. Marking Type number Marking Description BFU530 *TB * = t : made in Malaysia * = w : made in China |
Similar Part No. - BFU530_15 |
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Similar Description - BFU530_15 |
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