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BFU520Y Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFU520Y Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 20 page BFU520Y All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 — 20 February 2014 3 of 20 NXP Semiconductors BFU520Y Dual NPN wideband silicon RF transistor 5. Design support 6. Limiting values 7. Recommended operating conditions [1] Tsp is the temperature at the solder point of the collector lead. Table 5. Available design support Download from the BFU520Y product information page on http://www.nxp.com. Support item Available Remarks Device models for Agilent EEsof EDA ADS yes Based on Mextram device model. SPICE model yes Based on Gummel-Poon device model. S-parameters yes Noise parameters yes Solder pattern yes Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCB collector-base voltage open emitter - 30 V VCE collector-emitter voltage open base - 16 V shorted base - 30 V VEB emitter-base voltage open collector - 3 V IC collector current -50 mA Tstg storage temperature 65 +150 C VESD electrostatic discharge voltage Human Body Model (HBM) According to JEDEC standard 22-A114E - 150 V Charged Device Model (CDM) According to JEDEC standard 22-C101B - 2kV Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VCB collector-base voltage open emitter - - 24 V VCE collector-emitter voltage open base - - 12 V shorted base - - 24 V VEB emitter-base voltage open collector - - 2 V IC collector current - - 30 mA Pi input power ZS = 50 --10 dBm Tj junction temperature 40 - +150 C Ptot total power dissipation Tsp 87 C [1] --450 mW |
Similar Part No. - BFU520Y_15 |
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Similar Description - BFU520Y_15 |
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