BFU520Y

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Product data sheet

Rev. 1 — 20 February 2014

3 of 20

NXP Semiconductors

BFU520Y

Dual NPN wideband silicon RF transistor

5.

Design support

6.

Limiting values

7.

Recommended operating conditions

[1]

Table 5.

Available design support

Support item

Available

Remarks

Device models for Agilent EEsof EDA ADS

yes

Based on Mextram device model.

SPICE model

yes

Based on Gummel-Poon device

model.

S-parameters

yes

Noise parameters

yes

Solder pattern

yes

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

30

V

collector-emitter voltage

open base

-

16

V

shorted base

-

30

V

emitter-base voltage

open collector

-

3

V

collector current

-50

mA

storage temperature

65 +150

C

electrostatic discharge voltage

Human Body Model (HBM) According to JEDEC

standard 22-A114E

-

150

V

Charged Device Model (CDM) According to

JEDEC standard 22-C101B

-

2kV

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

collector-base voltage

open emitter

-

-

24

V

collector-emitter voltage

open base

-

-

12

V

shorted base

-

-

24

V

emitter-base voltage

open collector

-

-

2

V

collector current

-

-

30

mA

input power

--10

dBm

junction temperature

40

-

+150

C

total power dissipation

[1] --450

mW