BFU520Y_15 datasheet(8/20 Pages) PHILIPS

Part #	BFU520Y

Description	Dual NPN wideband silicon RF transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BFU520Y

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Product data sheet

Rev. 1 — 20 February 2014

8 of 20

NXP Semiconductors

BFU520Y

Dual NPN wideband silicon RF transistor

Tamb =25 C.

(1) VCE =3.0 V

(2) VCE =8.0 V

Tamb =25 C.

(1) VCE =3.0 V

(2) VCE =8.0 V

Fig 5.

Collector current as a function of base-emitter

voltage; typical values

Fig 6.

Base current as a function of base-emitter

voltage; typical values

VCE =3V.

(1) Tamb = 40 C

(2) Tamb = +25 C

(3) Tamb = +125 C

IC = 0 mA; f = 1 MHz; Tamb =25 C.

Fig 7.

Reverse base current as a function of

emitter-base voltage; typical values

Fig 8.

Collector capacitance as a function of

collector-base voltage; typical values

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