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IRF7807PBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRF7807PBF
Description  N Channel Application Specific MOSFETs
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7807PBF Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Symbol
IRF7807
IRF7807A
Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±12
Continuous Drain or Source
25°C
I
D
8.3
8.3
A
Current (V
GS ≥ 4.5V)
70°C
6.6
6.6
Pulsed Drain Current

I
DM
66
66
Power Dissipation
25°C
P
D
2.5
W
70°C
1.6
Junction & Storage Temperature Range
T
J, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)

I
S
2.5
2.5
A
Pulsed source Current
I
SM
66
66
• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
Description
These new devices employ advanced HEXFET
Power MOSFET technology to achieve an
unprecedented balance of on-resistance and gate
charge. The reduced conduction and switching losses
make them ideal for high efficiency DC-DC
Converters that power the latest generation of mobile
microprocessors.
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
HEXFET® Chip-Set for DC-DC Converters
Absolute Maximum Ratings
Parameter
Max.
Units
Maximum Junction-to-Ambient
ƒ
Rθ
JA
50
°C/W
Thermal Resistance
To p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
IRF7807PbF
IRF7807APbF
www.irf.com
1
09/22/04
SO-8
IRF7807 IRF7807A
Vds
30V
30V
Rds(on)
25m
25m
Qg
17nC
17nC
Qsw
5.2nC
Qoss
16.8nC
16.8nC
Device Features
PD – 95290


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