DMN26D0UFB4_15 datasheet(2/7 Pages) DIODES

Part #	DMN26D0UFB4

Description	N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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2 / 7 page

DMN26D0UFB4

Document number: DS31775 Rev. 11 - 2

2 of 7

www.diodes.com

May 2015

DMN26D0UFB4

Marking Information

DMN26D0UFB4-7

DMN26D0UFB4-7B

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

10

V

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

ID

240

190

mA

Continuous Drain Current (Note 5) VGS = 1.8V

Steady

State

TA = +25°C

TA = +70°C

ID

180

140

mA

Pulsed Drain Current - TP = 10µs

IDM

805

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Total Power Dissipation (Note 5) @TA = +25°C

PD

350

mW

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

357

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Note:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

e3

M1 = Part Marking Code

From date code 1527 (YYWW),

this changes to:

M1

Top View

Dot Denotes Drain Side

Top View

Bar Denotes Gate and Source Side

M1

Top View

Bar Denotes Gate and Source Side

M1

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DMN26D0UFB4 Datasheet(PDF) 2 Page - Diodes Incorporated

DMN26D0UFB4 Datasheet(HTML) 2 Page - Diodes Incorporated

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