2N6387G datasheet(4/6 Pages) ONSEMI

Part #	2N6387G

Description	Plastic Medium-Power Silicon Transistors

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2N6387, 2N6388

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4

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 100°C

SECOND BREAKDOWN LIMITED

20

1.0

Figure 5. Active-Region Safe Operating Area

2.0

0.03

10

20

80

TJ = 150°C

0.2

5.0

0.5

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

40

1.0

0.1

dc

2.0

60

4.0

6.0

50

ms

10

ms

CURVES APPLY BELOW RATED VCEO

5 ms

1 ms

50 ms

2N6387

2N6388

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150

_C. TJ(pk) may be calculated from the data in Figure

4. At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown

10,000

1.0

Figure 6. Small−Signal Current Gain

f, FREQUENCY (kHz)

10

2.0

5.0

10

20

50

100

200

1000

500

300

100

5000

20

3000

200

500

2000

1000

30

50

TC = 25°C

VCE = 4.0 Vdc

IC = 3.0 Adc

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30

1.0

2.0

5.0

20

100

10

200

100

70

50

Cib

Cob

50

0.2

0.5

TJ = 25°C

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3

0.5 0.7

1.0

2.0

10

500

300

TJ = 150°C

25

°C

-55

°C

VCE = 4.0 V

200

7.0

20,000

5000

10,000

3000

2000

1000

3.0

5.0

Figure 9. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3

0.5

1.0

2.0 3.0

5.0 7.0

30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A

6.0 A

1.0

0.7

20

10

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