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2N6111 Datasheet(PDF) 4 Page - ON Semiconductor

Part # 2N6111
Description  Complementary Silicon Plastic Power Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N6111 Datasheet(HTML) 4 Page - ON Semiconductor

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2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
http://onsemi.com
4
15
1.0
Figure 5. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
2.0
0.15
5.0
10
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25°C (SINGLE PULSE)
7.0
dc
0.1 ms
1.0
0.5
0.2
0.3
2.0
3.0
0.5 ms
20
30
50
70 100
3.0
0.7
0.1
ms
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_C; TC is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
0.5
VR, REVERSE VOLTAGE (VOLTS)
30
3.0
5.0
50
1.0
2.0
200
70
50
TJ = 25°C
Cib
100
Figure 6. Turn−Off Time
10
20
30
5.0
0.07
Figure 7. Capacitance
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.7
0.5
0.3
0.05
0.1
0.2
0.3
0.5
2.0
3.0
7.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.1
tr
1.0
5.0
0.2
0.07
ts
Cob
ORDERING INFORMATION
Device
Device Marking
Package
Shipping
2N6107G
2N6107
TO−220
(Pb−Free)
50 Units / Rail
2N6109G
2N6109
TO−220
(Pb−Free)
50 Units / Rail
2N6111G
2N6111
TO−220
(Pb−Free)
50 Units / Rail
2N6288G
2N6288
TO−220
(Pb−Free)
50 Units / Rail
2N6292G
2N6292
TO−220
(Pb−Free)
50 Units / Rail


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