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IRF7389PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7389PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 N-Channel P-Channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ± 20 TA = 25°C 7.3 -5.3 TA = 70°C 5.9 -4.2 Pulsed Drain Current IDM 30 -30 Continuous Source Current (Diode Conduction) IS 2.5 -2.5 TA = 25°C 2.5 TA = 70°C 1.6 Single Pulse Avalanche Energy EAS 82 140 mJ Avalanche Current IAR 4.0 -2.8 A Repetitive Avalanche Energy EAR 0.20 mJ Peak Diode Recovery dv/dt dv/dt 3.8 -2.2 V/ ns Junction and Storage Temperature Range TJ,TSTG -55 to + 150 °C HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. 6/29/04 SO-8 l Generation V Technology l Ultra Low On-Resistance l Complimentary Half Bridge l Surface Mount l Fully Avalanche Rated IRF7389PbF Description Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 50 °C/W Continuous Drain Current Maximum Power Dissipation A ID PD V W Symbol Maximum Units N-Ch P-Ch VDSS 30V -30V RDS(on) 0.029Ω 0.058Ω Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) www.irf.com 1 PD - 95462 l Lead-Free |
Similar Part No. - IRF7389PBF_15 |
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Similar Description - IRF7389PBF_15 |
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