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IRF7379PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7379PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. 10/7/04 SO-8 l Generation V Technology l Ultra Low On-Resistance l Complimentary Half Bridge l Surface Mount l Fully Avalanche Rated IRF7379PbF Description N-Ch P-Ch VDSS 30V -30V RDS(on) 0.045Ω 0.090Ω www.irf.com 1 Parameter Units A Absolute Maximum Ratings Thermal Resistance Ratings Parameter Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Max. N-Channel P-Channel VSD Drain-to-Source Voltage 30 -30 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.8 -4.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.6 -3.4 IDM Pulsed Drain Current 46 -34 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C PD - 95300 l Lead-Free |
Similar Part No. - IRF7379PBF_15 |
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Similar Description - IRF7379PBF_15 |
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