N-Ch

P-Ch

-55V

08/09/10

IRF7343QPBF

Description

D1

N-CHANNEL MOSFET

P-CHANNEL MOSFET

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

Max.

N-Channel

P-Channel

Units

Drain-Source Voltage

55

-55

V

4.7

-3.4

3.8

-2.7

Pulsed Drain Current 

38

-27

Maximum Power Dissipation

…

2.0

W

Maximum Power Dissipation

…

1.3

W

Single Pulse Avalanche Energyƒ

72

114

mJ

Avalanche Current

4.7

-3.4

A

Repetitive Avalanche Energy

0.20

mJ

Gate-to-Source Voltage

± 20

V

dv/dt

5.0

-5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

A

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

…

–––

62.5

°C/W

Thermal Resistance

www.irf.com

1

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

Dual N and P Channel MOSFET

l

Surface Mount

l

Available in Tape & Reel

l

150°C Operating Temperature

l

Lead-Free

utilize the lastest processing techniques to achieve extremely

low on-resistance per silicon area. Additional features of

these HEXFET Power MOSFET's are a 150°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating.These benefits combine to make

this design an extremely efficient and reliable device for use

in a wide variety of applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it

ideal in a variety of power applications. This dual, surface

mount SO-8 can dramatically reduce board space and is

also available

in Tape & Reel.

SO-8

PD - 96110A